This paper reports the fabrication and electrical characterization of hybrid organic-inorganic solar cell based on the deposition of polyaniline (PANI) on n-type GaAs substrate with three different crystal orientations namely Au/PANI/(100) n-GaAs/(Ni-Au), Au/PANI/(110) n-GaAs/(Ni-Au), and Au/PANI/(311)B n-GaAs/(Ni-Au) using spin coating technique. The effect of crystallographic orientation of n-GaAs on solar cell efficiency of the hybrid solar cell devices has been studied utilizing current density-voltage (J-V) measurements under illumination conditions. Additionally, the influence of planes of n-GaAs on the diode parameters of the same devices has been investigated by employing current-voltage (I-V) characteristics in the dark conditions at room temperature. The experimental observations showed that the best performance was obtained for solar cells fabricated with the structure of Au/PANI/(311)B n-GaAs/(Ni-Au). The open-circuit voltage (Voc), short circuit current density (Jsc), and solar cell efficiency () of the same device were shown the values of 342 mV, 0.294 mAcm-2, 0.0196%, respectively under illuminated condition. All the solar cell characteristics were carried out under standard AM 1.5 at room temperature. Also, diode parameters of PANI/(311)B n-GaAs heterostructures were calculated from the dark I-V measurements revealed the lower reverse saturation current (Io) of 3.0×10-9A, higher barrier height () of 0.79 eV and lower ideality factor (n) of 3.16.

The effects of two different growth methods including electrodeposition (ED) (two-electrode configuration) and chemical bath deposition (CBD) on the characteristic properties of CdS thin-films were explored and reported. The electrodeposited CdS (ED-CdS) layers were grown on glass/fluorine-doped tin oxide (FTO) substrates using acidic and aqueous solution containing 0.3 M of thiourea (SC(NH2)2) and 0.2 M of cadmium chloride hydrate (CdCl2.xH2O). The chemical bath deposited CdS (CBD-CdS) layers were also grown on glass/FTO substrates using alkaline and aqueous solution containing 4 × 10–3 M of cadmium acetate dihydrate (Cd(CH3CO2)2.2H2O), 20 × 10–3 M of thiourea (TU) and 6 × 10–2 M ammonium acetate (NH4C2H3O2). The deposited CdS thin-films were characterised using X-ray diffraction (XRD), UV–Visible spectrophotometer (UV–Vis), scanning electron microscopy (SEM), and photoelectrochemical (PEC) cell measurement to study their structural, optical, morphological, and electrical properties, respectively. The structural study shows the polycrystalline nature of the ED-CdS and CBD-CdS thin-films with stable hexagonal phase after heat treatment. The preferred orientation for both ED-CdS and CBD-CdS layers was along (002) hexagonal plane. The average crystallite size of CdS thin-films grown by both deposition methods were in the range ~ (11–38) nm and ~ (22–53) nm before and after heat treatment, respectively. Optical studies reveal the direct bandgap value of 2.42 eV for the heat-treated ED-CdS and CBD-CdS layers which correspond to the bulk bandgap of CdS (hexagonal phase). Morphological studies depict the average grain sizes in the range ~ (90–260) nm for the CdS thin-films. The PEC cell measurements show that the CdS layers grown by both ED and CBD methods were n-type in electrical conduction before and after heat treatment. No visible precipitations of elemental S or CdS particles were observed in the deposition electrolyte of ED-CdS showing a stable bath using TU precursor during the growth. The solar cells fabricated using CBD-CdS showed better performance as compared to the devices fabricated using ED-CdS due to the uniform coverage of FTO surface and better fill factor (FF).

Electrodeposition of zinc sulphide (ZnS) was achieved from electrolytic bath containing zinc sulphate monohydrate (ZnSO4·H2O) and ammonium thiosulphate ((NH4)2S2O3) in a two-electrode electroplating configuration. The cyclic voltammetric studies show that ZnS layers can be electroplated between (1350 and 1550) mV. The grown layers were characteristically explored for their structural, optical, morphological and electronic properties using X-ray diffraction (XRD) and Raman spectroscopy, UV–Visible spectrophotometry, scanning electron microscopy (SEM), photoelectrochemical (PEC) cell and DC conductivity measurements respectively. The structural analysis shows that crystalline ZnS can be deposited within a narrow cathodic deposition range between (1420 and 1430) mV. The UV–Visible spectrophotometry shows that the bandgap of both as-deposited and heat-treated ZnS films are in the range of ~ (3.70 to 3.90) eV. The SEM shows small grains depicting the wetting property of ZnS. The PEC results show that the electroplated ZnS below 1425 mV is p-type and above 1425 mV is n-type under both as-deposited and heat treated condition. The DC conductivity shows that the highest resistivity is at the inversion growth voltage (Vi) for the ZnS layers. The glass/FTO/n-ZnS/n-CdS/n-CdTe/Au devices were fabricated using crystalline-ZnS and amorphous-ZnS buffer layers. The devices were explored using current–voltage (I-V) and capacitance–voltage (C–V) techniques. As expected, devices fabricated with c-ZnS show improved device parameters (ideality factor n = 1.60, depletion width W = 1092 nm, open-circuit voltage Voc=730 mV, short-circuit current density Jsc=34.1 mAcm−2, fill factor FF = 0.57, conversion efficiency η = 14.2%) when compared to device parameters (n = 1.85, W = 900 nm, Voc=720 mV, Jsc=29.9 mAcm−2, FF = 0.52, η = 11.2%) of these devices fabricated with a-ZnS buffer layers.

The effect of electrodeposition technique on CdS thickness incorporated in CdS/CdTe-based solar cell has been investigated using all-electrodeposited g/FTO/n-CdS/ n-CdTe/p-CdTe multilayer device configuration. The optical, morphological and structural properties of the electroplated CdS were investigated for CdS thicknesses between 50 and 200 nm. The observed CdS bandgap ranges between 2.42 and 2.46 eV. The morphological analysis shows full coverage of underlying g/FTO substrate for all CdS thicknesses except for the 50 nm which shows the presence of gap in-between grains. The structural analysis shows a preferred orientation of H(101) for all the CdS thicknesses except the 50 nm thick CdS which shows either a weak crystallinity or an amorphous nature. The fabricated solar cell shows a maximum conversion efficiency of ~11 % using CdS thickness ranging between 100 and 150 nm. These results show that although low CdS thickness is desirable for photovoltaic application, the effect of nucleation mechanism of deposition technique should be taken into consideration.

CdCl2 treatment is a crucial step in development of CdS/CdTe solar cells. Although this processing step has been used over a period of three decades, full understanding is not yet achieved. This paper reports the experimental evidence for improvement of composition of CdTe layers during CdCl2 treatment. This investigation makes use of four selected analytical techniques; Photoelectro-chemical (PEC) cell, X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM). CdTe layers used were electroplated using three Cd precursors; CdSO4, Cd(NO3)2 and CdCl2. Results show the improvement of stoichiometry of CdTe layers during CdCl2 treatment through chemical reaction between Cd from CdCl2 and elemental Te that usually precipitate during CdTe growth, due to its natural behaviour. XRD and SEM results show that the low-temperature (~85 oC) electroplated CdTe layers consist of ~(20–60) nm size crystallites, but after CdCl2 treatment, the layers show drastic recrystallisation with grains becoming a few microns in size. These CdCl2 treated layers are then comparable to high temperature grown CdTe layers by the size of grains.

The fabrication of a one-sided p–n hetero-junction (HJ) diodes have been successfully carried out using both p-type ZnTe and n-CdS semiconductors. Chemical bath deposition (CBD) and electrodeposition (ED) techniques have been used in the deposition of n-CdS and p-ZnTe layers respectively. Before the fabrication of the one-sided p–n HJ diodes, the electrical properties of glass/ FTO/p-ZnTe/Al and glass/FTO/n-CdS/Au rectifying structures were separately studied using capacitance–voltage (C–V ) technique so as to determine the doping density of each of the thin films. The results from C–V analyses showed that p-ZnTe is moderately doped with an acceptor density of 3.55×1015 cm−3 while n-CdS is heavily doped with a donor density of 9.00×1019 cm−3. The heavy doping of n-CdS and moderate doping of p-ZnTe will make the interface between n-CdS and p-ZnTe thin films a one-sided n+p diode. Therefore, to fabricate the CdS/ZnTe hetero-structure, it was ensured that approximately same thickness of CdS and ZnTe thin films being used in the initial experiment to study the electrical properties of glass/FTO/n-CdS/Au and glass/FTO/p-ZnTe/Al were also used in the development of the one-sided n+p junction diodes to obtain more accurate results. The electronic properties of the device structure were studied using both current–voltage (IV ) and C–V measurement techniques. The I–V results show that the one-sided n+p HJ diodes possess good rectifying quality with aseries resistance (Rs) of ∼35 Ω and rectification factors exceeding 102.7 under dark condition. The results of the C–V analyses showed that the acceptor density of the onesided n+p HJ diode is of the order of 1015 cm−3 while the donor density is of the order of 1018 cm−3. The results obtained from this analysisstill showed the moderate doping of p-ZnTe and the degenerate nature of n-CdS.

Thin films of CdTe semiconductor materials were grown on fluorine doped tin oxide (FTO) conducting glass substrates using the technique of electrodeposition. CdSO4 at high concentrations and CdCl2, TeO2 at low concentrations were used as precursor salts for electrodeposition. The range of deposition potentials was estimated using cyclic voltammetric measurements. The electrical, optical, structural and morphological characteristics of asdeposited and annealed CdTe thin films were characterized using photo-electrochemical (PEC) cell studies, UV-Vis spectrophotometry, X-ray diffraction (XRD) and scanning electron microscopy (SEM). These particular samples were converted from n-type into p-type after heat treatment. UV-Vis spectrometric measurements for CdTe layers indicated that, the energy band gaps of 1.45±0.02 eV for both asdeposited and annealed samples which exhibited the required optical property for fabricating CdS/CdTe solar cells. Little increase in (220) and (311) peaks of XRD spectra were observed for annealed layers compared to the as-deposited material. However, annealing exhibited a small reduction of cubic phase preferential orientation (111). The optical transmission for both as-deposited and annealed CdTe samples were about 60% for wavelengths longer than about 850 nm.

CdS thin films have been successfully electrodeposited on glass/FTO substrates using acidic and aqueous solution of CdCl2.xH2O and thiourea (SC(NH2)2). The electrodeposition of CdS thin films were carried out potentiostatically using a 2-electrode system. The prepared films were characterised using X-ray diffraction, Raman spectroscopy, Scanning electron microscopy, Atomic force microscopy, Photoelectrochemical cell measurements, Electrical resistivity measurements and UV–Vis spectrophotometry to study their structural, compositional, morphological, electrical and optical properties, respectively. The structural studies show that the as-deposited and annealed CdS layers are polycrystalline with hexagonal crystal structure and preferentially oriented along (200) planes. The optical studies indicate that the ED-CdS layers have direct bandgaps in the range (2.53–2.58) eV for the as-deposited and (2.42–2.48) eV after annealing at 400 C for 20 min in air. The morphological studies show the good coverage of the FTO surface by the CdS grains. The average grain sizes for the as-deposited and annealed layers were in the range ~(60–225) nm. These grains or clusters are made out of smaller nano crystallites with the sizes in the range ~(11–33) nm. The electrical resistivity shows reduction as thickness increases. The resistivity values for the as-deposited and annealed layers were in the range (0.82–4.92) 9 105 Xcm. The optimum growth voltage for the CdS thin films was found to be at the cathodic potential of 797 mV with respect to the graphite anode. No visible precipitations of elemental S or CdS particles were observed in the deposition electrolyte showing a stable bath using thiourea during the growth.

The CdCl2 treatment used in the development of high efficiency CdTe solar cells is an essential processing step but remains fully unexplored. What really happens during this treatment is not yet fully understood. The changes in doping concentrations during this processing step are a key parameter to investigate. Determination of the position of the Fermi level (FL) is a good method to explore these changes and therefore photoelectrochemical cell method and ultraviolet photoelectron spectroscopy method have been used to investigate these trends. Four different CdTe layers prepared by electroplating have been used for this investigation. The overall observations indicate the settling down of the FL in the upper half of the bandgap after CdCl2 treatment.

Cadmium telluride (CdTe) thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2)·H2O and tellurium dioxide (TeO2) using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD), Raman spectroscopy, optical profilometry, DC current-voltage (I-V) measurements, photoelectrochemical (PEC) cell measurement, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE) in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52) eV reduce to (1.45–1.49) eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors. Keywords: electroplating; cadmium telluride (CdTe); CdCl2 treatment; material characterisation

Current solar cells under research and development utilise mainly one absorber layer limiting the photon harvesting capabilities. In order to develop next generation solar cells, research should move towards effective photon harvesting methods utilising low-cost solar energy materials. This will lead to reduce the $W−1 figure for direct solar energy conversion to electrical energy. In this work, a graded bandgap solar cell has been designed to absorb all photons from the UV, visible and IR regions. In addition, impurity PV effect and impact ionisation have been incorporated to enhance charge carrier creation within the same device. This new design has been experimentally tested using the most researched MOCVD grown GaAs/AlGaAs system, in order to confirm its validity. Devices with high Voc ~ 1175 mV and the highest possible FF ~ (0.85–0.87) have been produced, increasing the conversion efficiency to ~20% within only two growth runs. These devices were also experimentally tested for the existence of impurity PV effect and impact ionisation. The devices are PV active in complete darkness producing over 800 mV, Voc indicating the harvesting of IR radiation from the surroundings through impurity PV effect. The quantum efficiency measurements show over 140% signal confirming the contribution to PV action from impact ionisation. Since the concept is successfully proven, the low-cost and scalable electrodeposited semiconducting layers are used to produce graded bandgap solar cell structures. The utilisation of nano- and micro-rod type materials in graded bandgap devices are also presented and discussed in this paper. Preliminary work on glass/FTO/n-ZnS/n-CdS/n-CdTe/Au graded bandgap devices show 10%–12% efficient devices indicating extremely high Jsc values ~48 mA·cm−2, showing the high potential of these devices in achieving higher efficiencies. The detailed results on these low-cost and novel graded bandgap devices are presented in a separate publication. Keywords: graded bandgap structures; next generation solar cells; impurity PV effect; impact ionisation; nano-materials

This work is aimed at studying defect level distributions in the bandgap of CdTe thin films, used for solar cell development. In particular, the effects of CdCl2 treatment on the defect levels are the main objectives of this research. Four different nearly optimised CdTe thin films were electroplated using three different Cd-precursors (CdSO4, Cd(NO3)2 and CdCl2), and bulk CdTe wafers purchased from industry were studied using low temperature photoluminescence. The finger prints of defects, 0.55 eV below the conduction band down to the valence band edge were investigated. In all of the CdTe layers, four electron trap levels were observed with varying intensities but at very similar energy positions, indicating that the origin of these defects are mainly from native defects. CdCl2 treatment and annealing eliminates two defect levels completely and the mid-gap recombination centres are reduced drastically by this processing step. The optical bandgap of all four as-deposited CdTe layers is ~1.50 eV, and reduces to ~1.47 eV after CdCl2 treatment. The material grown using the CdCl2 precursor seems to produce CdTe material with the cleanest bandgap, most probably due to the built-in CdCl2 treatment while growing the material.

Cadmium telluride (CdTe) thin films have been electrodeposited (ED) on glass/fluorine-doped tin oxide (FTO) substrates using simplified two-electrode system in acidic and aqueous solution containing Cd(NO3)2 4H2O and TeO2. The X-ray diffraction (XRD), optical absorption, photoelectrochemical (PEC) cell measurements, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been carried out to study the structural, optical, electrical and morphological properties of the CdTe layers. The XRD study shows that the ED-CdTe layers are polycrystalline with cubic crystal structure. Results obtained from optical absorption reveal that the bandgaps of the as-deposited and the CdCl2 treated CdTe layers are in the ranges ~1.50 to ~1.54 eV and ~1.46 to ~1.51 eV, respectively. Observation from PEC measurements indicates a p-, i- and n-type electrical conductivity for as-deposited CdTe layers grown in the cathodic voltage range (1,247–1,258) mV. The SEM images indicate noticeable change in CdTe grain size from ~85 to ~430 nm after CdCl2 treatment with uniform surface coverage of the glass/FTO substrate. The TEM images show the columnar growth structure for as-deposited and CdCl2 treated CdTe layers. The TEM images also indicate an increase in grain’s diameter from ~50 to ~200 nm after CdCl2 treatment.

Thin film solar cells based on cadmium telluride (CdTe) are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV) effect as well as making use of IR photons from the surroundings when fully optimised. Keywords: electrodeposition; CdS/CdTe; thin film solar cells; graded bandgaps; nano-materials; next generation solar cells