Electrodermal activity (EDA) usually relates to variations in the electrical properties of palmar or plantar skin sites. EDA responses, namely skin conductance responses (SCRs), skin potential responses (SPRs) and skin susceptance responses (SSRs) are shown to be sensitive indexes of sympathetic nervous system activation and are studied in many research projects. However, the association between EDA responses and the five basic human senses has not been investigated yet. Our study aimed to explore the relationship between the three EDA responses (SCRs, SSRs and SPRs) and the five basic human senses. These three EDA responses were measured simultaneously at the same skin site on each of the 38 volunteers. The tested five senses were sight, hearing, touch, taste and smell. The results showed that the different tested senses led to different degrees of EDA responses due to activation of the sympathetic nervous system and corresponding secretion of sweat. Although a controlled study on the degree of EDA as a function of the strength of each stimulus was not performed, we noted that the largest EDA responses were typically associated with the smell sense test. We conclude that EDA responses could be utilized as measures for examining the sensitivity of the human senses. Hence, EDA devices may have important roles in sensory systems for future clinical applications.

Nowadays, production nanocomposites based on polymer by blending nanoparticles as a filler with a polymer-matrix had attracted the major concentration of researchers, these materials used now for several modern application and in multiple fields (semiconductors, sensors, photovoltaic cells, optics, electronic-device,…). So it should be concentrated on comprehensive the relation between the polymer-matrix and the nano-particle to achieve more advance in this field. In this paper, the effect of adding SiO 2 to PVP/PEO matrix by concentrations are investigated. The optical and thermal properties are evaluated. The properties of the studied films presented the new additions and specifications produced by this process. Briefly, results had shown enhancing in the absorbance, melting-temperature is increased. Additionally, the crystallinity degree of the nanocomposites is examined.

The simplest chemical spray approach has been used to grow the zinc oxide (ZnO) nanorods (NRs). For spraying, a basic perfume automizer was employed. Additionally, utilizing a variety of characterization techniques, the effects of various growth temperatures on the ZnO NRs properties were looked into and evaluated. The results of the investigation demonstrated that the growing temperature significantly affects all-characteristics properties of the ZnO NRs fabricated using the most straightforward spray approach. At various growth temperatures, the average diameters (size) and average crystalline sizes along with (002) of grown ZnO NRs were in the ranges of (47.89-51.29) nm and (44.128-52.565) nm, respectively. The hexagonal wurtzite plane was the optimum direction for ZnO NRs to be oriented, and as growth temperatures are raised. The absorption edge changed toward longer wavelengths and as growth temperature increased, the average absorbance also increased. The optical analysis reveals that the direct Eg. of the produced ZnO NRs lies in the (3.182-3.250) eV range.

The paper describes the impact of the crystallographic orientation of an n-type GaAs substrate on the electrical properties of sulfonated polyaniline (SPAN) thin film with a thickness of 120 nm grown on different n-type GaAs substrates orientation, which is (100), (311)A, and (311)B GaAs planes. Electrical characterization was performed by using current density-voltage (J−V) at room temperature and different temperatures (60−360 K). An ideality factor (n), a Schottky barrier height (Φb), and activation energy (Ea) were extracted from forwarding J−V characteristics. From the J−V results, it was obtained that the rectification value at 0.5 V for the SPAN/(311)B GaAs hybrid device is higher than those for SPAN grown on the (100) and (311)A GaAs planes. Furthermore, as the temperature of the three heterojunction devices rises, the value of Φb increases n drops, and Ea rises. The Ea measurements revealed that Ea for the SPAN/(311)B n-type GaAs heterostructure is lower than those for SPAN samples grown on the (100) and (311)A n-type GaAs planes. This could be related to the low number of SPAN/(311)B defects than the other two samples. These results make SPAN with a thickness of 120 nm grown on the high index GaAs planes an interesting hybrid device for future devices applications.