The simplest chemical spray approach has been used to grow the zinc oxide (ZnO) nanorods (NRs). For spraying, a basic perfume automizer was employed. Additionally, utilizing a variety of characterization techniques, the effects of various growth temperatures on the ZnO NRs properties were looked into and evaluated. The results of the investigation demonstrated that the growing temperature significantly affects all-characteristics properties of the ZnO NRs fabricated using the most straightforward spray approach. At various growth temperatures, the average diameters (size) and average crystalline sizes along with (002) of grown ZnO NRs were in the ranges of (47.89-51.29) nm and (44.128-52.565) nm, respectively. The hexagonal wurtzite plane was the optimum direction for ZnO NRs to be oriented, and as growth temperatures are raised. The absorption edge changed toward longer wavelengths and as growth temperature increased, the average absorbance also increased. The optical analysis reveals that the direct Eg. of the produced ZnO NRs lies in the (3.182-3.250) eV range.

The paper describes the impact of the crystallographic orientation of an n-type GaAs substrate on the electrical properties of sulfonated polyaniline (SPAN) thin film with a thickness of 120 nm grown on different n-type GaAs substrates orientation, which is (100), (311)A, and (311)B GaAs planes. Electrical characterization was performed by using current density-voltage (J−V) at room temperature and different temperatures (60−360 K). An ideality factor (n), a Schottky barrier height (Φb), and activation energy (Ea) were extracted from forwarding J−V characteristics. From the J−V results, it was obtained that the rectification value at 0.5 V for the SPAN/(311)B GaAs hybrid device is higher than those for SPAN grown on the (100) and (311)A GaAs planes. Furthermore, as the temperature of the three heterojunction devices rises, the value of Φb increases n drops, and Ea rises. The Ea measurements revealed that Ea for the SPAN/(311)B n-type GaAs heterostructure is lower than those for SPAN samples grown on the (100) and (311)A n-type GaAs planes. This could be related to the low number of SPAN/(311)B defects than the other two samples. These results make SPAN with a thickness of 120 nm grown on the high index GaAs planes an interesting hybrid device for future devices applications.